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  inchange semiconductor product specification silicon npn power transistors BU506 description ? with to-220c package ? high voltage ? high-speed switching applications ? horizontal deflection circuits of colour tv receivers. ? line-operated switch-mode applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cm collector current (pulse) 8 a i b base current 3 a i bm base current(peak) 5 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65-150 ??
inchange semiconductor product specification 2 silicon npn power transistors BU506 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v cesat collector-emitter saturation voltage i c =3a; i b =1.33a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =1.33a 1.3 v h fe dc current gain i c =0.1a ; v ce =5v 6 13 30 i ces collector cut-off current v ce =rated; v be =0 t c =125 ?? 0.5 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 10 ma switching times t s storage time 6.5 | s t f fall time i cm = 3 a; i b( end ) = 1a l b = 12 | h 0.7 | s
inchange semiconductor product specification 3 silicon npn power transistors BU506 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)


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